K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, S. Yamakoshi
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引用次数: 3
Abstract
In conclusion, we fabricated Ga2O3 SBDs on a single-crystal ß-Ga2O3 (010) substrate. The devices showed good device characteristics such as an ideal factor close to 1.0 and reasonably high reverse VBR. These results indicate that Ga2O3 SBDs have comparable or even more potential than Si and typical widegap semiconductors SiC and GaN have for power device applications. This work was partially supported by NEDO and JST PRESTO programs, Japan.
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