Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона

М.М. Соболев, Ф.Ю. Солдатенков
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Abstract

The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.
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中子辐射对高斯深层缺陷谱的影响,这是由氢和氩大气中液相冲击产生的。
采用液相外延技术,在900℃结晶温度下,在氢气或氩气环境中,自掺杂背景杂质制备的梯度高压GaAs p+−p0−i−n0二极管,研究了其中子辐照前后的电容电压特性和深能级瞬态光谱。经过中子辐照后,深能级瞬态光谱显示,在第0层中有宽区域的缺陷团簇,这些缺陷团簇具有类似受体的负电荷陷阱,这是由位于带隙中间以上的状态的电子发射引起的。研究发现,辐照后在氢气和氩气环境中生长的结构的电容电压特性的差异是由于不同剂量的GaAs p+−p0−i−n0结构的辐照和层内深阱对浅层供体杂质的不同程度补偿所致。
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