Isolated Preset Architecture for a 32nm SOI embedded DRAM macro

J. Barth, D. Plass, Adis Vehabovic, R. Joshi, R. Kanj, S. Burns, T. Weaver
{"title":"Isolated Preset Architecture for a 32nm SOI embedded DRAM macro","authors":"J. Barth, D. Plass, Adis Vehabovic, R. Joshi, R. Kanj, S. Burns, T. Weaver","doi":"10.1109/VLSIC.2012.6243814","DOIUrl":null,"url":null,"abstract":"The Isolated Preset Architecture (IPA) improves retention characteristics by implementing a weak read `1' Isolation scheme, allowing a lower stored `1' level to be sensed. The architecture also reduces sub-array area by 15% and bit-line activation power by 2× compared to previous design, without impacting performance. The architecture was implemented in IBM's 32nm High-K/Metal SOI embedded DRAM technology. Hardware results confirm 1.8ns random cycle and 2× improved retention characteristic with optimized Analog reference tuning.","PeriodicalId":6347,"journal":{"name":"2012 Symposium on VLSI Circuits (VLSIC)","volume":"21 1","pages":"110-111"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Circuits (VLSIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2012.6243814","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The Isolated Preset Architecture (IPA) improves retention characteristics by implementing a weak read `1' Isolation scheme, allowing a lower stored `1' level to be sensed. The architecture also reduces sub-array area by 15% and bit-line activation power by 2× compared to previous design, without impacting performance. The architecture was implemented in IBM's 32nm High-K/Metal SOI embedded DRAM technology. Hardware results confirm 1.8ns random cycle and 2× improved retention characteristic with optimized Analog reference tuning.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
32纳米SOI嵌入式DRAM宏的隔离预置架构
隔离预置架构(IPA)通过实现弱读“1”隔离方案来改善保留特性,允许感知较低的存储“1”级别。与之前的设计相比,该架构还减少了15%的子阵列面积和2倍的位线激活功率,而不会影响性能。该架构采用IBM的32nm High-K/Metal SOI嵌入式DRAM技术实现。硬件结果证实了1.8ns随机周期和2倍改进的保留特性与优化的模拟参考调谐。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 635pW battery voltage supervisory circuit for miniature sensor nodes A −70dBm-sensitivity 522Mbps 0.19nJ/bit-TX 0.43nJ/bit-RX transceiver for TransferJet™ SoC in 65nm CMOS A 21.5mW 10+Gb/s mm-Wave phased-array transmitter in 65nm CMOS Design of a 2.5-GHz, 3-ps jitter, 8-locking-cycle, all-digital delay-locked loop with cycle-by-cycle phase adjustment A sub-100µW multi-functional cardiac signal processor for mobile healthcare applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1