A. Nath, M. V. Rao, Francesco Moscatelli, Maurizio Puzzanghera, Fulvio Mancarella, R. Nipoti
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引用次数: 2
Abstract
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
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