Enhancement of ordering and perpendicular magnetic properties of CoPt films by adding Ag underlayer

C. Shen, P. Kuo, Y. S. Li, G. Lin, K. Huang, S. C. Chen
{"title":"Enhancement of ordering and perpendicular magnetic properties of CoPt films by adding Ag underlayer","authors":"C. Shen, P. Kuo, Y. S. Li, G. Lin, K. Huang, S. C. Chen","doi":"10.1109/INEC.2010.5424949","DOIUrl":null,"url":null,"abstract":"CoPt/Ag films were prepared by magnetron sputtering on glass substrates and subsequent annealing. The dependence of ordering degree and magnetic properties on Ag film thickness and annealing conditions were investigated. It was found that the Ag underlayer played a dominant role in inducing the (001) texture of the CoPt film after annealing. CoPt films with a thickness about 20 nm and Ag underlayers with a thickness about 70 nm are easy to obtain a well ordering degree and a perpendicular magnetic anisotropy after annealing at 700 °C for 30 min. CoPt/Ag films with a large perpendicular coercivity in the range of 13.5–14.0 kOe and a perpendicular squareness of 0.97 were obtained after annealing at 700 °C for 30 min. Ag underlayer is beneficial to enhance the perpendicular coercivity (Hc⊥) and perpendicular squareness (S⊥) of CoPt film significantly. The ordering degree and perpendicular magnetic properties of the CoPt films which deposited on Ag underlayer are larger than those of the single layer CoPt films.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"122 1","pages":"507-508"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 3rd International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2010.5424949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

CoPt/Ag films were prepared by magnetron sputtering on glass substrates and subsequent annealing. The dependence of ordering degree and magnetic properties on Ag film thickness and annealing conditions were investigated. It was found that the Ag underlayer played a dominant role in inducing the (001) texture of the CoPt film after annealing. CoPt films with a thickness about 20 nm and Ag underlayers with a thickness about 70 nm are easy to obtain a well ordering degree and a perpendicular magnetic anisotropy after annealing at 700 °C for 30 min. CoPt/Ag films with a large perpendicular coercivity in the range of 13.5–14.0 kOe and a perpendicular squareness of 0.97 were obtained after annealing at 700 °C for 30 min. Ag underlayer is beneficial to enhance the perpendicular coercivity (Hc⊥) and perpendicular squareness (S⊥) of CoPt film significantly. The ordering degree and perpendicular magnetic properties of the CoPt films which deposited on Ag underlayer are larger than those of the single layer CoPt films.
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添加银底层增强CoPt薄膜的有序磁性和垂直磁性
采用磁控溅射法制备了CoPt/Ag薄膜。研究了银膜厚度和退火条件对有序度和磁性能的影响。结果表明,Ag下层对CoPt薄膜退火后(001)织构的形成起主导作用。科普特人电影,厚度约20 nm和Ag)衬层厚度约70海里很容易获得一个订购学位和一个垂直磁各向异性在700°C退火后30分钟。科普特人/ Ag)电影,垂直的范围13.5 - -14.0 kOe矫顽力和垂直的垂直度0.97得到退火后30分钟。700°C Ag衬层有利于提高垂直矫顽力(Hc⊥)和垂直的垂直度(S⊥)科普特人电影明显。镀银下层的CoPt薄膜的有序度和垂直磁性能均大于单层CoPt薄膜。
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