New NRZ-mode resonant tunneling bistable-to-monostable-to-bistable transition logic element operating up to 36 Gb/s

Abstract

In this paper, we present new resonant tunneling bistable-to-monostable-to-bistable transition logic element with non-return-to-zero (NRZ) mode output. The proposed circuit is composed of resonant tunneling diode (RTD)/high electron mobility transistor (HEMT) series connection (RHS) and RTD/HEMT parallel connection (RHP). Novel high-speed and low-power NRZ delayed flip-flop (D-F/F) operation has been successfully achieved using RTD/HEMT integration technology on an InP substrate. The operation of the fabricated circuit was confirmed up to 36 Gb/s with a very low power dissipation of about 3 mW at a power supply voltage of 0.9 V.