{"title":"Optical characterization of Cu2ZnSnS4 thin films prepared by non-vacuum process for photodetector application","authors":"U. Chatterjee, S. Duttagupta, M. Gandhi","doi":"10.1109/ISPTS.2012.6260888","DOIUrl":null,"url":null,"abstract":"Cu2ZnSnS4 (CZTS) thin films have been successfully deposited by non-vacuum, sol-gel process on Molybdenum (Mo) coated Soda Lime Glass (SLG) substrate. The Cu, Zn, and Sn liquid precursor ratios have been pre-determined so as to achieve a Cu poor (23%) and Zn (14%) rich film with a goal to optimize absorber performance. A thermal annealing step (500°C, 60min) was performed in order to facilitate sulfurization from H2S source. The structural properties of CZTS film are determined by X-Ray Diffraction and Raman spectroscopy. We have confirmed deposition of a polycrystalline single phase (kesterite) CZTS thin film. Photoluminescence studies have been performed using an Yb:SYS laser at 534 nm and spanning room temperature (300K) and low temperature (8K) regimes in order to determine the optical band gap of the optimized CZTS absorber layer (1.24eV).","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":"5 1","pages":"92-95"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2012.6260888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Cu2ZnSnS4 (CZTS) thin films have been successfully deposited by non-vacuum, sol-gel process on Molybdenum (Mo) coated Soda Lime Glass (SLG) substrate. The Cu, Zn, and Sn liquid precursor ratios have been pre-determined so as to achieve a Cu poor (23%) and Zn (14%) rich film with a goal to optimize absorber performance. A thermal annealing step (500°C, 60min) was performed in order to facilitate sulfurization from H2S source. The structural properties of CZTS film are determined by X-Ray Diffraction and Raman spectroscopy. We have confirmed deposition of a polycrystalline single phase (kesterite) CZTS thin film. Photoluminescence studies have been performed using an Yb:SYS laser at 534 nm and spanning room temperature (300K) and low temperature (8K) regimes in order to determine the optical band gap of the optimized CZTS absorber layer (1.24eV).