Testing GaN HEMT Performance in High Power Factor Solutions

Abstract

This document shows the experimental results of a head-to-head Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) versus Silicon Superjunction SJ MOSFET comparison used in ac-dc high power factor converters. Three variable-frequency converters have been considered: Transition Mode Power Factor Corrector boost, Quasi resonant High-Power Factor flyback, Quasi resonant high-power factor buck-boost. To fully assess the benefits of GaN HEMT, a controller with no frequency limitation function has been used.