C. Yuen, Y. Pao, R. Majidi-Ahy, M. Riaziat, C. Nishimoto
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引用次数: 9
Abstract
The circuit design and fabrication of monolithic low-noise InP HEMT amplifiers that cover from 5 to beyond 100 GHz are described. The amplifiers use 0.25- mu m and 0.1- mu m InAlAs/InGaAs/InP HEMTs as active devices and on-chip matching and biasing circuits. The device performances for InP HEMTs with various gate geometries and the performance of the developed InP HEMT MMICs are presented.<>
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