Implantation of high-energy Si and Be ions in InP and low-energy transition metal ions in InGaAs

Abstract

High-energy ion implantation in compound semiconductors, an economical alternative to the epitaxial growth technique for fabrication of devices that need thick or buried active layers is discussed. High-energy Si implantations in InP yield buried layers with high carrier concentration and low defect density as long as the implant dose is less than the critical dose that makes the material amorphous. Elevated temperature implants need to be used to extend the critical dose. Compensation of the surface side tail of the implant profile is necessary to obtain the sharp carrier concentration depth profiles that are necessary for many device applications. The Be/P coimplantation is useful for obtaining buried p-type profiles without any broadening caused by Be in-diffusion. The Fe implantation is useful for obtaining high resistance regions in InGaAs.<>