Design of Coaxial TGV Substrates; Enhancing RF Via to Via Isolation

Tim LeClair, S. Martin
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引用次数: 1

Abstract

Enhanced electronic substrate design objectives for higher frequency products (5G telecom systems) can now be achieved with the use of novel coaxial-thru-via configurations in glass (TGVs). When compared with standard pillar filled thru-vias in glass, coaxial-thru-vias exhibit greater than 40dB improvement in via-to-via crosstalk isolation and 0.5dB improvement in insertion loss both at 30 GHz. Coaxial-Thru-Vias provide precise unadjusted 50 Ohm impedance matching device designs at the 5G product frequencies. The coaxial dielectric core chemistry is modifiable to tune electrical parameters to meet specific design requirements. This paper summarizes all designs, simulations, and modeling performed to date. The superior properties of coaxial vias in glass and fused silica over standard pillar vias are documented and captured in sweeps to 100 GHz. Via and pitch dimensions of 100/200 and 50/100 um have been assessed. Manufacturing methods have been demonstrated using thick film conductor materials in prototype designs. Coaxial vias can optionally be fabricated as dual-purpose configurations reducing thru-via count requirements, substrate footprints, and package/module costs.
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同轴TGV基板的设计增强RF Via to Via隔离
通过使用新型玻璃同轴通孔结构(tgv),可以实现更高频率产品(5G电信系统)的增强电子基板设计目标。与玻璃中标准柱填充通孔相比,同轴通孔在30 GHz时的通孔串扰隔离度提高了40dB以上,插入损耗提高了0.5dB。同轴通孔在5G产品频率下提供精确的未调整50欧姆阻抗匹配设备设计。同轴电介质芯化学是可修改的,以调整电气参数,以满足特定的设计要求。本文总结了迄今为止所进行的所有设计、仿真和建模。在玻璃和熔融石英同轴过孔优于标准柱过孔的优越性能被记录和捕获在扫描到100 GHz。对100/200微米和50/100微米的通孔和节距尺寸进行了评估。制造方法已经在原型设计中使用厚膜导体材料进行了演示。同轴过孔可以选择性地制造为双重用途配置,减少通孔数量要求、基板占用面积和封装/模块成本。
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