Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000026
Stephen M. Rothrock
Over the past 50 years, the semiconductor industry has faced its fair share of difficult challenges. The COVID-19 pandemic the world is currently experiencing has caused the worst downturn since the financial crisis of 2008, devastating global economies. And yet, the semiconductor industry has repeatedly shown incredible resilience in the face of adversity. Despite the pandemic, the market has not experienced such a dramatic upturn since 2003 and as a result, the new market upturn breaks open the fundamental flaws and risks of manufacturing concentration and outsourcing. At a time when the world is precariously dependent on Taiwan for semiconductors, how can the global supply chain forecast, manage, and plan for such sudden shifts in the future? Now more than ever before, advanced technology companies need to keep the finger on the pulse of supply and demand to successfully inform their strategic manufacturing decisions and remain agile to ensure continuity of supply. As chip demand booms in the midst of a supply shortage over the coming months and supply is no longer a given, what does the future hold for manufacturing fabs? Will greenfield become the rule rather than the exception in this new normal? How will the market upturn impact global fab location choices? Reflecting on some 20 years of experience completing international semiconductor manufacturing asset transactions in North America, Europe, and Asia, ATREG Founder, President, and CEO Stephen M. Rothrock will provide insights into the current global manufacturing asset market and how it is likely to evolve as part of the current market upturn.
在过去的50年里，半导体行业面临着相当多的困难挑战。当前全球正在经历的新冠肺炎疫情造成了2008年金融危机以来最严重的经济衰退，给全球经济带来了毁灭性打击。然而，面对逆境，半导体行业一再表现出令人难以置信的韧性。尽管疫情大流行，但市场自2003年以来从未出现过如此戏剧性的好转，因此，新的市场好转打破了制造业集中和外包的根本缺陷和风险。当世界对台湾半导体的依赖岌岌可危时，全球供应链如何预测、管理和计划未来这种突如其来的转变?现在，先进的技术公司比以往任何时候都更需要掌握供需脉搏，以成功地为其战略制造决策提供信息，并保持敏捷，以确保供应的连续性。在未来几个月供应短缺的情况下，随着芯片需求激增，供应不再是既定的，制造晶圆厂的未来将如何?在新常态下，绿地会成为常态而不是例外吗?市场好转将如何影响全球晶圆厂选址选择?ATREG创始人、总裁兼首席执行官Stephen M. Rothrock在北美、欧洲和亚洲完成了约20年的国际半导体制造资产交易，他将对当前的全球制造资产市场以及随着当前市场好转，它可能如何演变提供见解。
{"title":"Coronavirus, chip boom, and supply shortage: The new normal for global semiconductor manufacturing","authors":"Stephen M. Rothrock","doi":"10.4071/1085-8024-2021.1.000026","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000026","url":null,"abstract":"\u0000 Over the past 50 years, the semiconductor industry has faced its fair share of difficult challenges. The COVID-19 pandemic the world is currently experiencing has caused the worst downturn since the financial crisis of 2008, devastating global economies. And yet, the semiconductor industry has repeatedly shown incredible resilience in the face of adversity. Despite the pandemic, the market has not experienced such a dramatic upturn since 2003 and as a result, the new market upturn breaks open the fundamental flaws and risks of manufacturing concentration and outsourcing.\u0000 At a time when the world is precariously dependent on Taiwan for semiconductors, how can the global supply chain forecast, manage, and plan for such sudden shifts in the future? Now more than ever before, advanced technology companies need to keep the finger on the pulse of supply and demand to successfully inform their strategic manufacturing decisions and remain agile to ensure continuity of supply. As chip demand booms in the midst of a supply shortage over the coming months and supply is no longer a given, what does the future hold for manufacturing fabs? Will greenfield become the rule rather than the exception in this new normal? How will the market upturn impact global fab location choices?\u0000 Reflecting on some 20 years of experience completing international semiconductor manufacturing asset transactions in North America, Europe, and Asia, ATREG Founder, President, and CEO Stephen M. Rothrock will provide insights into the current global manufacturing asset market and how it is likely to evolve as part of the current market upturn.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73795898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000217
C. Peng, J. Lau, C. Ko, Paul Lee, E. Lin, Kai-Ming Yang, P. Lin, Tim Xia, Leo Chang, N. Liu, Curry Lin, T. Lee, Jason Wang, M. Ma, T. Tseng
In this study, a high-density organic hybrid substrate for chiplets heterogeneous integration is investigated. Emphasis is placed on the design, materials, process, fabrication, and characterization of the hybrid substrate with an interconnect-layer. A non-linear finite element analysis is performed to show the state of stress at the vias filled with a conductive paste of the interconnect-layer.
{"title":"Chiplets Heterogeneous Integration on High-Density Hybrid Substrate Using an Interconnect-Layer","authors":"C. Peng, J. Lau, C. Ko, Paul Lee, E. Lin, Kai-Ming Yang, P. Lin, Tim Xia, Leo Chang, N. Liu, Curry Lin, T. Lee, Jason Wang, M. Ma, T. Tseng","doi":"10.4071/1085-8024-2021.1.000217","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000217","url":null,"abstract":"\u0000 In this study, a high-density organic hybrid substrate for chiplets heterogeneous integration is investigated. Emphasis is placed on the design, materials, process, fabrication, and characterization of the hybrid substrate with an interconnect-layer. A non-linear finite element analysis is performed to show the state of stress at the vias filled with a conductive paste of the interconnect-layer.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"30 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77687465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000382
Tzu-Hsuan Cheng, Kenji Nishiguchi, Y. Fukawa, D. Hopkins
Direct Bonded Copper (DBC) is the most popular solution for conventional high-power modules because of superior thermal/electrical/mechanical performance and mature manufacturing. To meet the rising demand of power density and power rating, a Double-Sided Cooled (DSC) sandwich structure using dual insulated metal-clad substrates was proposed and DBC still dominated the substrate selection of DSC power modules. However, there are several long-existing reliability challenges of conventional DBC-based power modules and the cost of DBC is relatively high compared with organic and metal (e.g. lead frame) substrates. This study proposes a DSC 1.2 kV half-bridge power module using dual epoxy-resin Insulated Metal Substrate (eIMS) for solving DBC-based power module issues and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) DBC-based DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 μm) epoxy-resin composite dielectric layer compared with Alumina. The breakdown voltage of this high thermally conductive organic dielectric is 5 kVAC (@ 120 μm) and the Glass Transition Temperature (Tg) is 300°C which is indispensable for Wide-Band-Gap (WBG) devices and high-power applications. In terms of thermal-mechanical reliability, the organic-based DSC power module can pass the thermal cycling test over 2000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this paper not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.
{"title":"Thermal and Reliability Performance Comparison of DBC-Based and Organic-Based Double-Sided Cooled Power Modules","authors":"Tzu-Hsuan Cheng, Kenji Nishiguchi, Y. Fukawa, D. Hopkins","doi":"10.4071/1085-8024-2021.1.000382","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000382","url":null,"abstract":"\u0000 Direct Bonded Copper (DBC) is the most popular solution for conventional high-power modules because of superior thermal/electrical/mechanical performance and mature manufacturing. To meet the rising demand of power density and power rating, a Double-Sided Cooled (DSC) sandwich structure using dual insulated metal-clad substrates was proposed and DBC still dominated the substrate selection of DSC power modules. However, there are several long-existing reliability challenges of conventional DBC-based power modules and the cost of DBC is relatively high compared with organic and metal (e.g. lead frame) substrates. This study proposes a DSC 1.2 kV half-bridge power module using dual epoxy-resin Insulated Metal Substrate (eIMS) for solving DBC-based power module issues and providing a cost-effective solution. The thermal performance outperforms traditional Alumina (Al2O3) DBC-based DSC power module due to moderate thermal conductivity (10 W/mK) and thin (120 μm) epoxy-resin composite dielectric layer compared with Alumina. The breakdown voltage of this high thermally conductive organic dielectric is 5 kVAC (@ 120 μm) and the Glass Transition Temperature (Tg) is 300°C which is indispensable for Wide-Band-Gap (WBG) devices and high-power applications. In terms of thermal-mechanical reliability, the organic-based DSC power module can pass the thermal cycling test over 2000 cycles by optimizing the mechanical properties of the encapsulant material. In conclusion, this paper not only proposes a competitive organic-based power module but also a methodology of evaluation for thermal and mechanical performance.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83980754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000074
Birgit Brandstätter, B. Auer, H. Klingler, S. Scherbaum
Self-assembly of components driven by liquid surface tension is an attractive complement and even alternative to traditional high-accuracy pick-and-place as it offers high accuracy despite inaccurate robotic part placement. While capillary self-alignment through liquid solder is the standard technology for flip-chip processes, this work presents self-alignment of dies on wetted receptors on a temporary carrier: Low-viscosity liquid is jetted on each receptor where the liquid is contained through generation of hydrophilic and hydrophobic sections on the temporary carrier by plasma treatment. Deterministic die feeding by low-accuracy pick-and-place is conducted for single dies, as well as for batches of three dies and nine dies optimizing the equipment for best throughput to achieve both high accuracy and high productivity. The industry-ready and fully automated chip-to-wafer pick-and-place process is implemented into a fan-out wafer-level packaging production flow proving that self-alignment is capable of easing the stringent requirement for robotic alignment capability for pick-and-place systems in fan-out packaging for the single die-level step in this production chain. The self-alignment process is optimized, and failure modes such as poor liquid confinement, surface contamination, or excess force are identified and eliminated. Post-bond accuracy of <3 μm @ 3 σ at each point of the die is reached for dies of 3.1 mm x 3.1 mm in size. Using parallel die handling, high speeds of around 10 000 units per hour are made possible.
由液体表面张力驱动的组件自组装是传统高精度拾取和放置的一个有吸引力的补充，甚至是替代方案，因为它提供了高精度，尽管机器人零件放置不准确。虽然通过液体焊料的毛细管自对准是倒装芯片工艺的标准技术，但这项工作展示了在临时载体上的湿受体上的模具自对准:通过等离子体处理在临时载体上产生亲水性和疏水性部分，将低粘度液体喷射到每个受体上，其中包含液体。采用低精度取模方式对单个模具进行确定性送料，同时对批量的3个模具和9个模具进行优化，使设备达到最佳产量，实现高精度和高生产率。行业准备和全自动芯片到晶圆的拾取和放置过程被实施到扇形晶圆级封装生产流程中，证明自校准能够缓解该生产链中单个模具级步骤中扇形封装拾取和放置系统对机器人校准能力的严格要求。自对准过程进行了优化，失效模式，如不良的液体约束，表面污染，或过度的力被识别和消除。对于尺寸为3.1 mm × 3.1 mm的模具，每个点的键合精度均达到<3 μm @ 3 σ。使用平行模具处理，高速度每小时约10,000个单位是可能的。
{"title":"High-Accuracy Pick-and-Place of Multiple Dies in Parallel Assisted by Capillary Self-Alignment","authors":"Birgit Brandstätter, B. Auer, H. Klingler, S. Scherbaum","doi":"10.4071/1085-8024-2021.1.000074","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000074","url":null,"abstract":"\u0000 Self-assembly of components driven by liquid surface tension is an attractive complement and even alternative to traditional high-accuracy pick-and-place as it offers high accuracy despite inaccurate robotic part placement. While capillary self-alignment through liquid solder is the standard technology for flip-chip processes, this work presents self-alignment of dies on wetted receptors on a temporary carrier: Low-viscosity liquid is jetted on each receptor where the liquid is contained through generation of hydrophilic and hydrophobic sections on the temporary carrier by plasma treatment. Deterministic die feeding by low-accuracy pick-and-place is conducted for single dies, as well as for batches of three dies and nine dies optimizing the equipment for best throughput to achieve both high accuracy and high productivity. The industry-ready and fully automated chip-to-wafer pick-and-place process is implemented into a fan-out wafer-level packaging production flow proving that self-alignment is capable of easing the stringent requirement for robotic alignment capability for pick-and-place systems in fan-out packaging for the single die-level step in this production chain. The self-alignment process is optimized, and failure modes such as poor liquid confinement, surface contamination, or excess force are identified and eliminated. Post-bond accuracy of <3 μm @ 3 σ at each point of the die is reached for dies of 3.1 mm x 3.1 mm in size. Using parallel die handling, high speeds of around 10 000 units per hour are made possible.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82853847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000015
C. Lee, T. Tran, A. Mawer, Xs Pang, J. Yao
172-lead (16x16 mm body size) and 100-lead (10x10 mm body size) MAXQFP's and 172 MAXQFP_EP (exposed pad) for automotive industry are introduced. The advantage of MAXQFP as compare to standard LQFP/QFP packages will be outlined. Thermal & mechanical simulation results were performed to prove its advantage over conventional LQFP and LQFP_EP. The challenges in manufacturing, designs and concerns of tighter lead pitches for MAXQFP are briefly addressed. Methods and data to resolve these challenges will be shown. For example, Sn whisker and Sn migration both are concerns to MAXQFP because of smaller distance between adjacent leads. The board-level solder joint reliability (SJR) has been collected to prove it is AEC G1 compliant. Visual inspection methods and requirements on AOI (automatic object inspection) systems on solider joints of J-leads of MAXQFP for are proposed. Standard AEC G1 component level reliability stresses defined at AEC Q100 which are TC (temperature cycling), HTSL (high temperature storage life), THB (Temperature Humidity Biased) and uHAST (un-biased HAST) tests are summarized Since Cu wires were used, AEC Q006 data are also collected. Assembly challenges are described. Future works will be summarized.
{"title":"MAXQFP: NXP's new package solution for automotive application","authors":"C. Lee, T. Tran, A. Mawer, Xs Pang, J. Yao","doi":"10.4071/1085-8024-2021.1.000015","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000015","url":null,"abstract":"\u0000 172-lead (16x16 mm body size) and 100-lead (10x10 mm body size) MAXQFP's and 172 MAXQFP_EP (exposed pad) for automotive industry are introduced. The advantage of MAXQFP as compare to standard LQFP/QFP packages will be outlined. Thermal & mechanical simulation results were performed to prove its advantage over conventional LQFP and LQFP_EP. The challenges in manufacturing, designs and concerns of tighter lead pitches for MAXQFP are briefly addressed. Methods and data to resolve these challenges will be shown. For example, Sn whisker and Sn migration both are concerns to MAXQFP because of smaller distance between adjacent leads. The board-level solder joint reliability (SJR) has been collected to prove it is AEC G1 compliant. Visual inspection methods and requirements on AOI (automatic object inspection) systems on solider joints of J-leads of MAXQFP for are proposed. Standard AEC G1 component level reliability stresses defined at AEC Q100 which are TC (temperature cycling), HTSL (high temperature storage life), THB (Temperature Humidity Biased) and uHAST (un-biased HAST) tests are summarized Since Cu wires were used, AEC Q006 data are also collected. Assembly challenges are described. Future works will be summarized.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"631 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78980537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000356
HongWen Zhang, Samuel Lytwynec, Huaguang Wang, J. Geng, Francis Mutuku, N. Lee
Development of high-temperature lead-free (HTLF) solders to replace high-lead solders for die-attachment in power device applications is driven by (1) the harmful effects of lead to human health and the environment, and (2) the demand of the improved bonding materials serving under high-power density and high-junction temperatures, especially for wide-band-gap power devices. A novel design, based on a mixed solder powder paste technology—Durafuse™—has been developed to deliver a Sn-rich HTLF paste, presenting the merits of both constituent powders. The combination of the rigid, high-melting SnSbCuAgX and the ductile, low-temperature Sn-rich solder in one paste enables reflow at a relatively low temperature (barely above the liquidus temperature of the final joint composition) and maintains the joint strength above 15MPa in the temperature range between 270°C and 295°C. The sufficient high-temperature strength has demonstrated the capability of maintaining the joint integrity during subsequent multiple SMT reflows below the 270°C peak temperature, regardless of the existence of a partial melting phase. Both X-ray inspection and cross-section microstructure have not shown any damage in the Si die or any noticeable cracks in the bonding joint, even after 3000 cycles of TCT (−40 to 150°C). In summary, Durafuse™ HT, the novel design of the high-temperature lead-free pastes, has shown the feasibility as a drop-in solution to replace high-lead solders for die-attachment in power discrete applications.
{"title":"A Novel Design of High-Temperature Lead-Free Solders for Die-Attachment in Power Discrete Applications","authors":"HongWen Zhang, Samuel Lytwynec, Huaguang Wang, J. Geng, Francis Mutuku, N. Lee","doi":"10.4071/1085-8024-2021.1.000356","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000356","url":null,"abstract":"\u0000 Development of high-temperature lead-free (HTLF) solders to replace high-lead solders for die-attachment in power device applications is driven by (1) the harmful effects of lead to human health and the environment, and (2) the demand of the improved bonding materials serving under high-power density and high-junction temperatures, especially for wide-band-gap power devices. A novel design, based on a mixed solder powder paste technology—Durafuse™—has been developed to deliver a Sn-rich HTLF paste, presenting the merits of both constituent powders. The combination of the rigid, high-melting SnSbCuAgX and the ductile, low-temperature Sn-rich solder in one paste enables reflow at a relatively low temperature (barely above the liquidus temperature of the final joint composition) and maintains the joint strength above 15MPa in the temperature range between 270°C and 295°C. The sufficient high-temperature strength has demonstrated the capability of maintaining the joint integrity during subsequent multiple SMT reflows below the 270°C peak temperature, regardless of the existence of a partial melting phase. Both X-ray inspection and cross-section microstructure have not shown any damage in the Si die or any noticeable cracks in the bonding joint, even after 3000 cycles of TCT (−40 to 150°C). In summary, Durafuse™ HT, the novel design of the high-temperature lead-free pastes, has shown the feasibility as a drop-in solution to replace high-lead solders for die-attachment in power discrete applications.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"155 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86208763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000171
Andrew Ma, Daniel Deaton, A. Engin
The vector-fitting algorithm has been the predominant method of macromodeling of high-frequency circuits for the past 20 years. Vector fitting is based on a partial-fractions basis to avoid the ill-conditioning of the Vandermonde matrices in direct fitting of the polynomial coefficients of a rational function. In a recent formulation of the Sanathanan- Koerner iteration, an orthogonal basis is obtained using the Arnoldi iteration significantly improving the conditioning and accuracy of rational approximation. This Stabilized Sanathanan-Koerner (SSK) iteration has been mostly applied on closed-form functions or data with no noise. We will utilize this SSK formulation for high-frequency package interconnect macromodeling. The method will be tested using empirical scattering parameters on a noisy transmission line system. The resultant curve fit will then be compared to several other polynomial and rational linear approximation methods, including the standard polynomial approximation. We show that the SSK method compares favorably to these different methods and provide a curve fit that can provide a reasonable approximation over different frequency ranges.
{"title":"Stabilized Sanathanan-Koerner Iteration for Rational Transfer Function Approximation of Scattering Parameters","authors":"Andrew Ma, Daniel Deaton, A. Engin","doi":"10.4071/1085-8024-2021.1.000171","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000171","url":null,"abstract":"\u0000 The vector-fitting algorithm has been the predominant method of macromodeling of high-frequency circuits for the past 20 years. Vector fitting is based on a partial-fractions basis to avoid the ill-conditioning of the Vandermonde matrices in direct fitting of the polynomial coefficients of a rational function. In a recent formulation of the Sanathanan- Koerner iteration, an orthogonal basis is obtained using the Arnoldi iteration significantly improving the conditioning and accuracy of rational approximation. This Stabilized Sanathanan-Koerner (SSK) iteration has been mostly applied on closed-form functions or data with no noise. We will utilize this SSK formulation for high-frequency package interconnect macromodeling. The method will be tested using empirical scattering parameters on a noisy transmission line system. The resultant curve fit will then be compared to several other polynomial and rational linear approximation methods, including the standard polynomial approximation. We show that the SSK method compares favorably to these different methods and provide a curve fit that can provide a reasonable approximation over different frequency ranges.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88212799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000031
E. Suhir
Burn-in testing (BIT) is a costly undertaking. Predictive modeling enables shading useful light on what and how should be tested, if at all. Three analytical (“mathematical”) predictive models recently suggested by the author are addressed in this mini-review: 1) A model based on the analysis of the infant mortality portion (IMP) of the bathtub curve (BTC) suggests that the non-random time derivative of the expected “statistical” failure rate (SFR) at the beginning of the IMP could be viewed as a suitable criterion (“figure of merit”) to answer the basic question of the BIT undertaking: “to BIT or not to BIT?” 2) A model based on the analysis of the random failure rate (RFR) of the mass-produced components that the manufactured product of interest is comprised of suggests that the above derivative is, in effect, the RFR variance of these components. 3) A model based on the use of the kinetic multi-parametric Boltzmann-Arrhenius-Zhurkov (BAZ) constitutive equation is employed to establish the BIT's adequate duration and level, if this kind of failure-oriented-accelerated-testing (FOAT) is found to be necessary. The theoretical findings are illustrated by calculated data. It is concluded that predictive modeling should always precede the actual BIT, that analytical modeling should always complement computer simulations and that future work should address the experimental validation and possible extension of the obtained results and recommendations.
{"title":"Burn-in-Testing (BIT) Challenge: to BIT or not to BIT?","authors":"E. Suhir","doi":"10.4071/1085-8024-2021.1.000031","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000031","url":null,"abstract":"\u0000 Burn-in testing (BIT) is a costly undertaking. Predictive modeling enables shading useful light on what and how should be tested, if at all. Three analytical (“mathematical”) predictive models recently suggested by the author are addressed in this mini-review: 1) A model based on the analysis of the infant mortality portion (IMP) of the bathtub curve (BTC) suggests that the non-random time derivative of the expected “statistical” failure rate (SFR) at the beginning of the IMP could be viewed as a suitable criterion (“figure of merit”) to answer the basic question of the BIT undertaking: “to BIT or not to BIT?” 2) A model based on the analysis of the random failure rate (RFR) of the mass-produced components that the manufactured product of interest is comprised of suggests that the above derivative is, in effect, the RFR variance of these components. 3) A model based on the use of the kinetic multi-parametric Boltzmann-Arrhenius-Zhurkov (BAZ) constitutive equation is employed to establish the BIT's adequate duration and level, if this kind of failure-oriented-accelerated-testing (FOAT) is found to be necessary. The theoretical findings are illustrated by calculated data. It is concluded that predictive modeling should always precede the actual BIT, that analytical modeling should always complement computer simulations and that future work should address the experimental validation and possible extension of the obtained results and recommendations.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91175639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1.000159
S. Fritzsche, Manu Noe Vaidya, P. Prenosil, Katja Stenger, Jörg Trodler, M. Jörger
Commercially known as Innolot, the highly reliable lead-free alloy, allowing for high operating temperatures, is a Tin-Silver-Copper (SAC) metallurgical system with additional elements to harden the alloy and to improve its creep strength in order to significantly improve the reliability of solder joints. Compared to traditional SAC alloys, the characteristic lifetime can be enhanced on the base of temperature cycle tests (TCT) from −40°C to +125°C or even extended to 150°C. Assemblies in the automotive industry increasingly require higher reliability for safety relevant and emerging applications such as Advanced Driver Assistance Systems (ADAS). Cost-reduction requirements demand a new approach for optimized soldering processes and materials. As the current reflow process prefers Nitrogen atmosphere for low defects in high reliability soldering, our research focuses around the partial and/or complete change to air soldering processes. Furthermore, we investigate the influence of different surface finishes such as Chemical Sn, NiAu, and Cu OSP, and modified alloy compositions in the soldering performance. Apart from initial characterizations for various assemblies, reliability tests on Heraeus Reliability1 printed circuit boards as well as temperature cycle tests from −40 to +150°C for up to 2500 cycles are reported and resulting failure modes are discussed. This paper furthermore describes the potential for cost reductions via process and/or material optimizations without diminishing the high reliability performance for such automotive applications.
{"title":"New approach for High Reliable & Cost-Effective Solder alloys for Automotive Applications","authors":"S. Fritzsche, Manu Noe Vaidya, P. Prenosil, Katja Stenger, Jörg Trodler, M. Jörger","doi":"10.4071/1085-8024-2021.1.000159","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1.000159","url":null,"abstract":"\u0000 Commercially known as Innolot, the highly reliable lead-free alloy, allowing for high operating temperatures, is a Tin-Silver-Copper (SAC) metallurgical system with additional elements to harden the alloy and to improve its creep strength in order to significantly improve the reliability of solder joints. Compared to traditional SAC alloys, the characteristic lifetime can be enhanced on the base of temperature cycle tests (TCT) from −40°C to +125°C or even extended to 150°C.\u0000 Assemblies in the automotive industry increasingly require higher reliability for safety relevant and emerging applications such as Advanced Driver Assistance Systems (ADAS). Cost-reduction requirements demand a new approach for optimized soldering processes and materials. As the current reflow process prefers Nitrogen atmosphere for low defects in high reliability soldering, our research focuses around the partial and/or complete change to air soldering processes. Furthermore, we investigate the influence of different surface finishes such as Chemical Sn, NiAu, and Cu OSP, and modified alloy compositions in the soldering performance. Apart from initial characterizations for various assemblies, reliability tests on Heraeus Reliability1 printed circuit boards as well as temperature cycle tests from −40 to +150°C for up to 2500 cycles are reported and resulting failure modes are discussed.\u0000 This paper furthermore describes the potential for cost reductions via process and/or material optimizations without diminishing the high reliability performance for such automotive applications.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80139283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-10-01DOI: 10.4071/1085-8024-2021.1
K. Becker, S. Voges, P. Fruehauf, M. Heimann, S. Nerreter, R. Blank, M. Erdmann, S. Gottwald, A. Hofmeister, M. Hesse, M. Thies, S. Mehrafsun, R. Fust, E. Beck, J. Pawlikowski, B. Schröder, C. Voight, T. Braun, M. Schneider-Ramelow
Digitization is one of the hot topics in all Industry 4.0 efforts that are currently discussed. Often the focus is on digitization of business processes with a financial/organizational perspective on manufacturing, so the tools are adapting to enterprise resource planning [ERP] and manufacturing execution system [MES] rather than on actual manufacturing issues on the shop floor. Within the SiEvEI 4.0 project, a research consortium from the area of electronics manufacturing is working on digitization for a manufacturing scenario where high value electronic goods are built in a distributed manufacturing environment. The key research topics addressed are the implementation of a Chain of Trust [CoT] for such a distributed manufacturing, i.e. and the application of artificial intelligence/machine learning to analyze and eventually optimize manufacturing processes. The paper will introduce the concept of both COT and AI-based process analysis that will later on transferred into a microelectronics production environment. Two reference processes are targeted, SMD assembly using fully automated manufacturing equipment and Solder Ball Application using a high-mix/low volume concept. As a result, the paper presents a concept of how to digitize manufacturing processes and use this digital description of a process combination to make a distributed manufacturing flow safe and increase product/process quality.
{"title":"Implementation of Trusted Manufacturing & AI-based process optimization into microelectronic manufacturing research environments","authors":"K. Becker, S. Voges, P. Fruehauf, M. Heimann, S. Nerreter, R. Blank, M. Erdmann, S. Gottwald, A. Hofmeister, M. Hesse, M. Thies, S. Mehrafsun, R. Fust, E. Beck, J. Pawlikowski, B. Schröder, C. Voight, T. Braun, M. Schneider-Ramelow","doi":"10.4071/1085-8024-2021.1","DOIUrl":"https://doi.org/10.4071/1085-8024-2021.1","url":null,"abstract":"\u0000 Digitization is one of the hot topics in all Industry 4.0 efforts that are currently discussed. Often the focus is on digitization of business processes with a financial/organizational perspective on manufacturing, so the tools are adapting to enterprise resource planning [ERP] and manufacturing execution system [MES] rather than on actual manufacturing issues on the shop floor. Within the SiEvEI 4.0 project, a research consortium from the area of electronics manufacturing is working on digitization for a manufacturing scenario where high value electronic goods are built in a distributed manufacturing environment. The key research topics addressed are the implementation of a Chain of Trust [CoT] for such a distributed manufacturing, i.e. and the application of artificial intelligence/machine learning to analyze and eventually optimize manufacturing processes.\u0000 The paper will introduce the concept of both COT and AI-based process analysis that will later on transferred into a microelectronics production environment. Two reference processes are targeted, SMD assembly using fully automated manufacturing equipment and Solder Ball Application using a high-mix/low volume concept.\u0000 As a result, the paper presents a concept of how to digitize manufacturing processes and use this digital description of a process combination to make a distributed manufacturing flow safe and increase product/process quality.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"92 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83809655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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