CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

Huchuan Zhou, P. Kropelnicki, J. Tsai, Chengkuo Lee
{"title":"CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers","authors":"Huchuan Zhou, P. Kropelnicki, J. Tsai, Chengkuo Lee","doi":"10.1109/MEMSYS.2013.6474270","DOIUrl":null,"url":null,"abstract":"An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.","PeriodicalId":92162,"journal":{"name":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2013.6474270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
采用垂直集成双多晶硅层的cmos热电堆
采用cmos兼容工艺,设计并制作了一种基于垂直集成双层热电堆(VIDL)的红外传感器,该热电堆由96个热电偶组成。对这种热电堆的性能进行了表征。VIDL热电堆的响应度Rs为202.8V/W,探测率D*为2.85×108 cmHz1/2 W-1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Characterization of solid UV cross-linked PEGDA for biological applications Neurospheroid array on a flexible substrate for cortical microstimulation Simultaneous ablation and injection by electrically-induced mono-dispersed bubble knife for biomedical applications High power lithium ion microbatteries with lithographically defined 3-D porous electrodes Silicon nanowire and cantilever electromechanical switches with integrated piezoresistive transducers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1