Sequential single-photon and direct two-photon absorption processes for Xe interacting with attosecond XUV pulses

A. Hadjipittas, H. Banks, B. Bergues, A. Emmanouilidou
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引用次数: 2

Abstract

We investigate the interaction of Xe with isolated attosecond XUV pulses. Specifically, we calculate the ion yields and determine the pathways leading to the formation of ionic charged states up to Xe$^{5+}$. To do so, in our formulation we account for single-photon absorption, sequential multi-photon absorption, direct two-photon absorption, single and double Auger decays, and shake-off. We compare our results for the ion yields and for ion yield ratios with recent experimental results obtained for 93 eV and 115 eV attosecond XUV pulses. In particular, we investigate the role that a sequence of two single-photon ionization processes plays in the formation of Xe$^{4+}$. We find that each one of these two processes ionizes a core electron and thus leads to the formation of a double core-hole state. Remarkably, we find that the formation of Xe$^{5+}$ involves a direct two-photon absorption process and the absorption of a total of three photons.
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Xe与阿秒XUV脉冲相互作用的顺序单光子和直接双光子吸收过程
我们研究了Xe与孤立阿秒XUV脉冲的相互作用。具体来说,我们计算了离子产率,并确定了导致离子带电态形成的途径,最高可达Xe$^{5+}$。为此,在我们的公式中,我们考虑了单光子吸收、顺序多光子吸收、直接双光子吸收、单俄歇和双俄歇衰变以及振荡。我们将我们的结果与最近在93 eV和115 eV阿秒XUV脉冲中获得的离子产率和离子产率比进行了比较。特别地,我们研究了两个单光子电离过程序列在Xe$^{4+}$的形成中所起的作用。我们发现这两个过程中的每一个都电离一个核心电子,从而导致双核空穴态的形成。值得注意的是,我们发现Xe$^{5+}$的形成涉及一个直接的双光子吸收过程和总共三个光子的吸收过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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