J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière
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引用次数: 3
Abstract
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.
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