Р. Н. Рагимов, А.С. Кахраманова, Д. Г. Араслы, А. А. Халилова, И. Х. Мамедов, А.Р. Халилзаде
{"title":"Термоэлектрические свойства твердых растворов Ag-=SUB=-8-=/SUB=-Ge-=SUB=-1-x-=/SUB=-Mn-=SUB=-x-=/SUB=-Te-=SUB=-6-=/SUB=-","authors":"Р. Н. Рагимов, А.С. Кахраманова, Д. Г. Араслы, А. А. Халилова, И. Х. Мамедов, А.Р. Халилзаде","doi":"10.21883/ftp.2022.09.53406.9760","DOIUrl":null,"url":null,"abstract":"Abstract. Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0; 0.05; 0.1; 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag8Ge1-xMnxTe6 lattice. All p-type samples had high resistance below the transition at temperatures of 180 - 220 K. An increase in electrical conductivity in the range of 220 - 300 K was analyzed using the Mott ratio; at temperatures T > 320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT = 0.7 at 550 K was obtained for a solid solution of the composition Ag8Ge1-xMnxTe6 (х = 0.05).","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"46 10 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2022.09.53406.9760","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Abstract. Ag8Ge1-xMnxTe6 solid solutions with different manganese content (x = 0; 0.05; 0.1; 0.2) were prepared by alloying and further pressing the powders under a pressure of 0.6 GPa. By the X-ray diffraction studies have shown that the introduction of manganese atoms leads to the compressibility of the Ag8Ge1-xMnxTe6 lattice. All p-type samples had high resistance below the transition at temperatures of 180 - 220 K. An increase in electrical conductivity in the range of 220 - 300 K was analyzed using the Mott ratio; at temperatures T > 320 K, semiconductor behavior is observed in all compositions. The highest thermoelectric figure of merit ZT = 0.7 at 550 K was obtained for a solid solution of the composition Ag8Ge1-xMnxTe6 (х = 0.05).
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