Low cost fabrication and testing of high isolation RF MEMS switches

Abstract

RF MEMS switches are key components in lowpower communication system. The present paper reports fabrication of MEMS based series and shunt switches for actuation voltage in the range of 30–50V. Focusing on low cost fabrication approach, Aluminum was chosen as a cost effective alternative for fabrication of transmission line and structural beam. The switches were designed for higher isolation of >25dB and low insertion loss of <0.5dB. The shunt and series switches were investigated for the frequency range of 1–20 GHz. The shunt switch shows an insertion loss of 0.5db and isolation of −28dB @ 20GHz and the series switch shows an insertion loss of 0.7db and isolation of −27dB @ 20GHz. The measured actuation voltage was 30V for shunt switch and 42V for series switch.