{"title":"Reactively ion etched nonuniform-depth grating for advanced DFB lasers","authors":"M. Matsuda, Y. Kotaki, H. Ishikawa, O. Wada","doi":"10.1109/ICIPRM.1991.147347","DOIUrl":null,"url":null,"abstract":"An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 20 1","pages":"256-259"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<>
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