Electron Beam Inspection: Voltage Contrast Inspection to Characterize Contact Isolation

R. Hafer, A. Stamper, J. Hsieh
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引用次数: 1

Abstract

For a recent replacement metal gate (RMG) FINFET technology using a silicon-on-insulator (SOI) substrate, contact to gate electrical isolation is monitored with Electron Beam Inspection (EBI). The variation in isolation could be due to either lithography overlay error or critical dimensions. The inspection is performed in a Voltage contrast mode (VC). A within reticle inspection using EBI is proposed to characterize the within-reticle and within-wafer variation.
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电子束检测:电压对比检测表征接触隔离
对于最近使用绝缘体上硅(SOI)衬底的替代金属栅极(RMG) FINFET技术,使用电子束检测(EBI)监测接触到栅极的电气隔离。隔离度的变化可能是由于光刻覆盖错误或临界尺寸。检查是在电压对比模式(VC)中执行的。提出了一种利用EBI来表征线内和圆内变化的线内检测方法。
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