Josephson array oscillator with microstrip resonators for submillimeter wave region

Akira Kawakami, Yoshinori Uzawa, Zhen Wang
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Abstract

Shunted tunnel junctions with a small parasitic inductance have been developed for improving the operating frequency of Josephson array oscillators. The inductance was minimized by reducing the inductive length to 1 μm and was estimated to be about 40 fH. The analysis of resonant properties for the shunted junctions gave a high resonant frequency up to 1.4 THz. Josephson array oscillators were designed and fabricated to operate at near Nb gap frequency (700 GHz) using 11 shunted Nb/AlOx/Nb tunnel junctions with Nb microstrip resonators. Shapiro steps induced by Josephson oscillation were clearly observed above the Nb gap frequency (up to 830 GHz). By fitting the step height to the simulation result using the RLCSJ model, the output power of the Josephson oscillator to the load resistor was estimated to be about 0.1 μW at 680 GHz.

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带微带谐振器的约瑟夫森阵列亚毫米波振荡器
为了提高约瑟夫森阵列振荡器的工作频率,研究了具有小寄生电感的并联隧道结。通过将感应长度减小到1 μm,电感最小,估计约为40 fH。通过对分流结谐振特性的分析,得到了高达1.4太赫兹的高谐振频率。利用11个分流的Nb/AlOx/Nb隧道结和Nb微带谐振器,设计和制造了工作在Nb间隙频率(700 GHz)附近的Josephson阵列振荡器。在Nb间隙频率(高达830ghz)以上,明显观察到由约瑟夫森振荡引起的夏皮罗阶跃。利用RLCSJ模型拟合步进高度与仿真结果,估计在680 GHz时,约瑟夫森振荡器对负载电阻的输出功率约为0.1 μW。
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