{"title":"Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)","authors":"T. Lee, E. Chang","doi":"10.47363/jnsrr/2022(4)131","DOIUrl":null,"url":null,"abstract":"Molybdenum disulfide (MoS2 ) transistors are emerging as an exciting material system for future electronics due to their unique electrical properties, twodimensional (2D) nature and atomically thin geometry. This ultra-thin-body (UTB) semiconductor considerably reduces current leakage and enables gate-to-channel control. The homogeneous growth of sub-10 nm dielectrics on 2D materials remains challenging. We demonstrate high-performance MoS2 FETs at low temperature (150°C) using the plasma-enhanced Atomic layer deposition (PEALD) technique. The device exhibits a high on/off current ratio of about 106 , the field-effect mobility of 9.5 cm2 /Vs, and a subthreshold swing (SS) of 171 mV/dec, which is comparable to the similar structure of the top gate device. In addition, we have demonstrated contact resistance on back-gate MoS2 FETs with and without dielectric capping","PeriodicalId":16545,"journal":{"name":"Journal of Nanosciences Research & Reports","volume":"38 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanosciences Research & Reports","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.47363/jnsrr/2022(4)131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Molybdenum disulfide (MoS2 ) transistors are emerging as an exciting material system for future electronics due to their unique electrical properties, twodimensional (2D) nature and atomically thin geometry. This ultra-thin-body (UTB) semiconductor considerably reduces current leakage and enables gate-to-channel control. The homogeneous growth of sub-10 nm dielectrics on 2D materials remains challenging. We demonstrate high-performance MoS2 FETs at low temperature (150°C) using the plasma-enhanced Atomic layer deposition (PEALD) technique. The device exhibits a high on/off current ratio of about 106 , the field-effect mobility of 9.5 cm2 /Vs, and a subthreshold swing (SS) of 171 mV/dec, which is comparable to the similar structure of the top gate device. In addition, we have demonstrated contact resistance on back-gate MoS2 FETs with and without dielectric capping
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