Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment

N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno
{"title":"Investigations of fluxless flip-chip bonding using vacuum ultraviolet and formic acid vapor surface treatment","authors":"N. Unami, H. Noma, K. Sakuma, A. Shigetou, S. Shoji, J. Mizuno","doi":"10.1109/ISAPM.2011.6105704","DOIUrl":null,"url":null,"abstract":"We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.","PeriodicalId":6440,"journal":{"name":"2011 International Symposium on Advanced Packaging Materials (APM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Symposium on Advanced Packaging Materials (APM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2011.6105704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

We studied the effects of surface treatment using vacuum ultraviolet (VUV) and formic acid vapor for SnCu-Au flip-chip bonding. Sn-rich solder bumps are widely used for flip-chip interconnections because of low melting temperature and high mechanical strength. For fine pitch interconnections, surface modification is needed before the bonding process. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) were used to investigate Sn surfaces. The results showed how the VUV/O3 surface treatment removes the carbon-based organic contaminants from the Sn surfaces and the formic acid treatment reduces the metal oxides of Sn. Combination of VUV/O3 and formic acid treatments improved shear strength of a bonded sample. The average shear strength of each bump with VUV/O3 and/or formic acid treatment is about twice that of a bump with no treatment.
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真空紫外和甲酸蒸气表面处理无焊剂倒装片键合的研究
研究了真空紫外(VUV)和甲酸蒸气表面处理对SnCu-Au倒装片键合的影响。富锡焊点因其熔点温度低、机械强度高而广泛应用于倒装芯片互连。对于小间距互连,需要在粘合前进行表面改性。利用x射线光电子能谱(XPS)和俄歇电子能谱(AES)对锡表面进行了研究。结果表明,VUV/O3表面处理可以去除锡表面的碳基有机污染物,甲酸处理可以减少锡的金属氧化物。VUV/O3和甲酸处理的组合提高了粘合样品的剪切强度。VUV/O3和/或甲酸处理后,每个凸起的平均抗剪强度约为未处理凸起的两倍。
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