Simulation of AsH3 plasma immersion ion implantation into silicon

Abstract

Plasma immersion ion implantation from AsH₃ plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×10²² cm^-3 and penetration depths below 10 nm at a concentration of 1×10¹⁸ cm^-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF₃ plasma and a new one that accounts for the specifics of AsH₃ plasma.