Improved ion source stability using H2 co-gas for fluoride based dopants

Abstract

Fluoride based gases are commonly used in the ion implantation. Gases such as GeF₄, SiF₄ use as pre-amorphization species and BF₃ is for high dose p-type BF₂ and ¹¹Boron can be a productivity challenge for conventional ion implanters used for semi-conductor device applications. As device geometries continuously shrink, there is a trend to deliver higher beam currents at lower energies, with a corresponding reduction in particles and metal contamination.