Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko
{"title":"Pyrotransistor-GaAs FET with a \"pyroelectric wafer\" gate","authors":"Y. Poplavko, V. Moskalyuk, A.I. Timofeyev, Y. Prokopenko","doi":"10.1109/ISAF.1994.522464","DOIUrl":null,"url":null,"abstract":"The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named \"pyrotransistor\" that is uncooled far infrared detector based on MESFET technology.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"698-700"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The multifunction properties of GaAs and other III-V semi-insulating crystals can be expanded by the artificial decreasing of their electric response symmetry that could be transformed from piezo- into a pyroelectric class. An artificial pyroelectricity of III-V type semiconductors can form a basis for one-crystal pyroelectric sensors. The voltage sensitivity of GaAs (111)-cut corresponds to one of PZT pyroelectric ceramics so the GaAs wafer could be used as a thermal-to-electric transducer in a new microelectronic device named "pyrotransistor" that is uncooled far infrared detector based on MESFET technology.
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