{"title":"Organic Non-Volatile Memory Device: Floating-Gate Organic Thin Film Transistor","authors":"Cheng-Long Wu, Jian-hong Yang, Shui-Ying Jia, Xue‐yuan Cai, Xiaoyan Sheng","doi":"10.3969/J.ISSN.1005-9490.2011.04.001","DOIUrl":null,"url":null,"abstract":"A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.","PeriodicalId":10074,"journal":{"name":"电子器件","volume":"17 1","pages":"355-358"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"电子器件","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.3969/J.ISSN.1005-9490.2011.04.001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.
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