Pub Date : 2014-01-01DOI: 10.1007/978-1-4614-3872-4_260
Bin Chen, Wenliang Wu, Yao Zhang
{"title":"The Design and Implementation of Digital Signature System Based on Elliptic Curve","authors":"Bin Chen, Wenliang Wu, Yao Zhang","doi":"10.1007/978-1-4614-3872-4_260","DOIUrl":"https://doi.org/10.1007/978-1-4614-3872-4_260","url":null,"abstract":"","PeriodicalId":10074,"journal":{"name":"Chinese Journal of Electron Devices","volume":"42 1","pages":"2041-2047"},"PeriodicalIF":0.0,"publicationDate":"2014-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81153727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.
{"title":"Organic Non-Volatile Memory Device: Floating-Gate Organic Thin Film Transistor","authors":"Cheng-Long Wu, Jian-hong Yang, Shui-Ying Jia, Xue‐yuan Cai, Xiaoyan Sheng","doi":"10.3969/J.ISSN.1005-9490.2011.04.001","DOIUrl":"https://doi.org/10.3969/J.ISSN.1005-9490.2011.04.001","url":null,"abstract":"A new structure is proposed for organic thin film transistors (OTFT) and the operation of the device is presented. The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate, and the different threshold voltages can be used to store two different states: ”0” and ”1”. So this device can be used as organic non-volatile memory device. This device is studied by the method of numeric simulation, and the study shows this memory device has a large memory window about 4 V and good programmable memory characteristics. This new structure memory device can be widely used in the filed of information storage.","PeriodicalId":10074,"journal":{"name":"Chinese Journal of Electron Devices","volume":"17 1","pages":"355-358"},"PeriodicalIF":0.0,"publicationDate":"2011-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83550816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-06-20DOI: 10.3969/J.ISSN.1005-9490.2011.03.002
Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu
A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.
{"title":"A Capacitive Polyimide Humidity Sensor with Grid-Type Upper Electrode by CMOS Process","authors":"Shui-Ying Jia, Jian-hong Yang, Hong Xie, Xue‐yuan Cai, Cheng-Long Wu","doi":"10.3969/J.ISSN.1005-9490.2011.03.002","DOIUrl":"https://doi.org/10.3969/J.ISSN.1005-9490.2011.03.002","url":null,"abstract":"A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity, hysteresis, and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12% and 92%, the sensitivity is 0.9 pF/RH, and the response time is about 5.5 s.","PeriodicalId":10074,"journal":{"name":"Chinese Journal of Electron Devices","volume":"6 1","pages":"242-246"},"PeriodicalIF":0.0,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79773639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-01-01DOI: 10.4324/9781315256894-55
A. Lo, Pankaj N. Patel
LCD,as an important part of Display,has several characteristics,such as uniformity、refresh-rate、line scan、contrast and response time etc.The factors above influence the accuracy of LCD's measurement.Luminance and response time are the uppermost pars of measurement.And we can use several devices to measure in our system.The experiment results will provide detail information for further improvement of LCD.
{"title":"PERFORMANCE MEASUREMENT AND EVALUATION","authors":"A. Lo, Pankaj N. Patel","doi":"10.4324/9781315256894-55","DOIUrl":"https://doi.org/10.4324/9781315256894-55","url":null,"abstract":"LCD,as an important part of Display,has several characteristics,such as uniformity、refresh-rate、line scan、contrast and response time etc.The factors above influence the accuracy of LCD's measurement.Luminance and response time are the uppermost pars of measurement.And we can use several devices to measure in our system.The experiment results will provide detail information for further improvement of LCD.","PeriodicalId":10074,"journal":{"name":"Chinese Journal of Electron Devices","volume":"2 4","pages":"421-430"},"PeriodicalIF":0.0,"publicationDate":"2006-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72482051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-01-01DOI: 10.1109/icce.1992.697114
Wang Baoping
A new motion adaptive de-interlacing method by combining three-point median filter and edge directional line averaging filter have been developed. Three-point median filter is used for deal with static pictures and edge directional line averaging filter is used for deal with moving pictures. This method works well in both static pictures and moving pictures. This method has been implemented with CPLD.
{"title":"A Motion-adaptive De-interlacing Method","authors":"Wang Baoping","doi":"10.1109/icce.1992.697114","DOIUrl":"https://doi.org/10.1109/icce.1992.697114","url":null,"abstract":"A new motion adaptive de-interlacing method by combining three-point median filter and edge directional line averaging filter have been developed. Three-point median filter is used for deal with static pictures and edge directional line averaging filter is used for deal with moving pictures. This method works well in both static pictures and moving pictures. This method has been implemented with CPLD.","PeriodicalId":10074,"journal":{"name":"Chinese Journal of Electron Devices","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2003-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78556017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：