F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel, M. Puech
{"title":"Low temperature deposition of SiO/sub 2/ on InP substrates by DECR PECVD","authors":"F. Plais, B. Agius, N. Proust, S. Cassette, G. Ravel, M. Puech","doi":"10.1109/ICIPRM.1991.147435","DOIUrl":null,"url":null,"abstract":"The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"90 1","pages":"547-550"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147435","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The low temperature deposition of SiO/sub 2/ thin films onto InP substrates is discussed. It is shown that the physical and chemical properties of SiO/sub 2/ thin films are stable over a three month period. X-ray photoelectron spectroscopy (XPS) analysis of the chemistry of the SiO/sub 2/-InP interface reveals the presence of an interfacial substrate oxide. The MIS C(V) characteristics exhibit low frequency dispersion and a deep depletion regime, but it is shown that the measurement procedure can significantly affect the fixed charge and interface state density determination.<>
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