MeV-proton channeling in crystalline silicon

Abstract

Hydrogen implantation has become an important application in the fabrication of power semiconductor devices. With the product requirement of a well-defined implantation profile, adequate control of the incident beam angle is necessary in order to avoid channeling effects. With respect to the different scan systems of commercial implanters and the crystal alignment of the bulk material the implant tilt and twist angles have to be adapted. We used commercially available <;100>-oriented silicon wafers to examine planar channeling along a {110}-plane for proton energies in the range of 0.5-2.5 MeV. The critical angle as a function of proton energy is determined from photothermal response measurements (TWIN).