Rahul Kumar, Neeraj Goel, R. Raliya, P. Biswas, Mahesh Kumar
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引用次数: 0
Abstract
We demonstrated an ultraviolet detector employing an in-plane transport channel of n-type MoS2 with out-of-plane p-type rGO, which acts as a sensitizer for underlying n-type MoS2 photodetector. A developed vertical built-in field from vertical p-n nano-heterojunction separates the photo-excited carriers at the rGO/MoS2 interface. Therefore, the rGO/MoS2 device showed a notably improved photo-responsivity of $\sim$ 6.92 A)/W and an excellent detectivity of 1.26 $\times$ 1012 Jones under the irradiation of ultraviolet light. Moreover, the device exhibited an excellent reproducibility and stability in ambient environment even after four months.
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