Development of novel Pb, Li, Na and K-free piezoelectric materials for Si-based MEMS application

H. Funakubo, S. Yasui, K. Yazawa, J. Nagata, T. Oikawa, T. Yamada, H. Uchida
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Abstract

We developed the piezoelectric materials not including Pb, Li, K and Na as constituent elements. Our concern is the composition survey of the morphotropic phase boundary between tetragonal and non-tetragonal ferroelectric materials. In this approach, we must select the tetragonal ferroelectrics other than PbTiO3 and (Bi1/2K1/2)TiO3 as a end material. BiCoO3 and Bi(Zn1/2Ti1/2)O3 are novel tetragonal candidates for this purpose. We successfully grew epitaxial tetragonal films having ferroelectricity in BiCoO3-BiFeO3 and Bi(Zn1/2Ti1/2)O3-BiFeO3 systems. Based on these system, composition having maximum piezoelectric response of d33(AFM) = 280 pm/V was discovered for epitaxial films in Bi(Zn1/2Ti1/2)O3-Bi(Mg1/2Ti1/2)O3-BiFeO3 system.
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用于硅基MEMS的新型无铅、无锂、无钠、无钾压电材料的研制
研制了不含Pb、Li、K、Na等组成元素的压电材料。我们关注的是四方和非四方铁电材料之间的相变相界的组成调查。在这种方法中,我们必须选择除PbTiO3和(Bi1/2K1/2)TiO3以外的四方铁电体作为末端材料。BiCoO3和Bi(Zn1/2Ti1/2)O3是用于此目的的新型四边形候选者。我们成功地在BiCoO3-BiFeO3和Bi(Zn1/2Ti1/2)O3-BiFeO3体系中生长出具有铁电性的外延四方薄膜。在此基础上,发现了Bi(Zn1/2Ti1/2)O3-Bi(ml1 / 2ti1 /2)O3-BiFeO3体系中外延薄膜的最大压电响应d33(AFM) = 280 pm/V。
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