Large-Grain Epitaxial Thickening Polycrystalline Silicon Films on AIC-Seed Layer by HWCVD with Different Hydrogen Dilution

Abstract

A thickening polycrystalline silicon (pc-Si) layer with a grain size of 35 μm was grown on an aluminum-induced crystallization (AIC) Si film, with low and high hydrogen dilution. An AIC seed layer was grown on a glass substrate, and a pc-Si epitaxial layer was deposited on it at 450◦C by hot-wire chemical vapor deposition. The AIC seed layer exhibits a highly crystalline structure and enhances the growth of the pc-Si layer. The crystalline fraction (93%) with high hydrogen dilution was larger than that (21%) with low hydrogen dilution, owing to low activation energy for nucleation and grain growth. © 2011 The Electrochemical Society. [DOI: 10.1149/2.014203esl] All rights reserved.