Low-Temperature Synthesis of Vanadium Dioxide Thin Films by Sol-Gel Dip Coating Method

IF 3.9 Q2 NANOSCIENCE & NANOTECHNOLOGY Journal of Nanotechnology Pub Date : 2021-06-17 DOI:10.1155/2021/4868152
L. Chotirat, S. Niyomwas, Witthawat Wongpisan, S. Supothina
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引用次数: 6

Abstract

The vanadium dioxide (VO2) thin films were synthesized by sol-gel dipping on a glass slide substrate at low temperature of 500°C in a vacuum tube furnace at a pressure of 2 × 10−3 mbar by 2-step calcination without an intermediate gas purging. Synthesis conditions, including temperature, vacuum pressure, and calcination steps in the vacuum tube furnace, were investigated to find the optimum condition that promoted the formation of VO2 phase. It was found that the 2nd calcination step was very important in realizing the monoclinic vanadium dioxide (VO2 (M)). The results of the valence electron analysis revealed the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The small crystallites of the VO2 were homogeneously distributed on the surface, and the grain was of an irregular shape of ∼220−380 nm in size. The film’s thickness was in a range of 69−74 nm. The film exhibited a metal-to-insulator transformation temperature of ∼68oC and good thermochromic property. Visible optical transmittance remained at ∼40−50% when the sample’s temperature changed from 25 to 80°C for a near infrared (NIR) region.
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溶胶-凝胶浸涂法低温合成二氧化钒薄膜
在真空管炉中,在2 × 10−3 mbar压力下,在低温500℃条件下,采用溶胶-凝胶浸渍法在玻片衬底上制备了二氧化钒(VO2)薄膜,没有中间气体吹扫。通过对温度、真空压力、真空管炉煅烧步骤等合成条件的研究,找到了促进VO2相形成的最佳条件。发现第二步煅烧是实现单斜晶型二氧化钒(VO2 (M))的重要步骤。价电子分析结果显示,样品中存在较多的VO2相,少量的V2O5和V2O3相。VO2的小晶均匀分布在表面,晶粒形状不规则,尺寸为~ 220 ~ 380 nm。薄膜厚度在69 ~ 74 nm之间。该薄膜表现出金属到绝缘体的转变温度为~ 68℃,具有良好的热致变色性能。在近红外(NIR)区域,当样品温度从25℃变化到80℃时,可见光透过率保持在~ 40 ~ 50%。
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来源期刊
Journal of Nanotechnology
Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
5.50
自引率
2.40%
发文量
25
审稿时长
13 weeks
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