P. Ren, Hao-Xiang Lin, Li-E. Cai, Chao-Zhi Xu, Zhi-Chao Chen, Hongyi Lin, F. Xiong, Jinman Huang, Linlin Cai
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引用次数: 0
Abstract
Herein, a novel AlGaN‐based multiple quantum well (MQW) deep UV light‐emitting diode (DUV‐LED) structure with two parts linearly graded barriers is presented. The simulation result shows that at a current of 50 mA, the light output power of the DUV‐LED with two parts linearly graded barrier MQWs has significant improvement as compared to stationary barriers. The electroluminescence spectrum and radiative recombination rate of novel DUV‐LEDs are also larger more than twice that of the conventional QW structure. The reason is that the injection efficiency of holes is increased which helps improve the hole and electron concentration in the active area. Meanwhile, the electric field is also decreased by using two parts linearly graded quantum barriers, and according to reduce the electric field the quantum‐confined Stark effect and the bend of the energy band get relieved.
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