Coming Up N3XT, After 2D Scaling of Si CMOS

William Hwang, W. Wan, S. Mitra, H. Wong
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引用次数: 4

Abstract

As two-dimensional scaling of Si CMOS crosses the nanometer threshold, from 7 nm, 5 nm, 3 nm, toward 1 nm technology nodes, will it continue to provide the energy efficiency required of future computing systems? A scalable, fast, and energy-efficient computation platform that may provide another 1,000× in computing energy efficiency (energy-execution time product) will have massive on-chip memory co-located with highly energy-efficient computing logic, enabled by 3D integration (e.g., monolithic) with ultra-dense and fine-grained connectivity. There will be multiple layers of memories interleaved with computing logic, sensors, and application-specific devices. We call this technology platform N3XT, Nano-engineered Computing Systems Technology. In this paper, we give an overview of the nanoscale memory and logic technologies that enable N3XT.
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即将到来的N3XT,在Si CMOS的二维缩放之后
随着Si CMOS的二维尺度跨越纳米阈值,从7nm、5nm、3nm,到1nm的技术节点,它能否继续提供未来计算系统所需的能效?一个可扩展的、快速的、节能的计算平台可以提供另外1000倍的计算能效(能量-执行时间产品),它将拥有大量的片上内存,并具有高能效的计算逻辑,通过具有超密集和细粒度连接的3D集成(例如,单片集成)实现。将有多层存储器与计算逻辑、传感器和特定应用的设备交织在一起。我们称这个技术平台为N3XT,即纳米工程计算系统技术。在本文中,我们概述了实现N3XT的纳米级存储和逻辑技术。
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