Session 11 overview: SRAM: Memory subcommittee

Jonathan Chang, C. Shiah, Leland Chang
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Abstract

SRAM continues to be the critical technology enabler for a wide range of applications from low-power to high-performance computing. This session showcases the leading-edge SRAM developments from the semiconductor industry. Intel presents the smallest SRAM bitcell for 10nm technology, with design assist techniques to enable low VMIN operation. Samsung presents the smallest bitcell for 7nm technology and shows a double-write driver technique to further improve VMIN. TSMC demonstrates a 7nm 5GHz L1 cache for high-performance computing.
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第11部分概述:SRAM:内存小组委员会
SRAM仍然是从低功耗到高性能计算的广泛应用的关键技术推动者。本次会议将展示半导体行业SRAM的最新发展。英特尔推出了用于10nm技术的最小SRAM位元,并采用设计辅助技术实现低VMIN操作。三星展示了用于7nm技术的最小位单元,并展示了进一步改善VMIN的双写入驱动技术。台积电展示了用于高性能计算的7nm 5GHz L1缓存。
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