{"title":"Low Actuation Voltage Nano-Electro-Mechanical Switching Device for Ultra-Low Power Applications","authors":"Krutikesh Sahoo, P. Sen, N. Bhat","doi":"10.1109/icee44586.2018.8938003","DOIUrl":null,"url":null,"abstract":"In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of $\\sim 2.4$ mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"10 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8938003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper we propose a two-terminal diode type nano-electro-mechanical (NEM) switch with a low actuation voltage of about 2.5 V and sharp subthreshold slope of $\sim 2.4$ mV/decade obtained by reducing the air gap between electrodes. This type of switch will find applications in non-volatile memory, NEM resonators and sensors.
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