Y. Kang, P. Mages, A. Pauchard, A. Clawson, S. Lau, Y. Lo, P. Yu
{"title":"Dark current reduction in fused InGaAs/Si avalanche photodiode","authors":"Y. Kang, P. Mages, A. Pauchard, A. Clawson, S. Lau, Y. Lo, P. Yu","doi":"10.1109/LEOS.2001.969043","DOIUrl":null,"url":null,"abstract":"Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 /spl mu/m have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm/sup 2/ at -5 V and 3 mA/cm/sup 2/ at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"34 1","pages":"772-773 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.969043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Mesa type fused InGaAs/Si separated absorption and multiplication APDs with a diameter of 130 /spl mu/m have been fabricated on n-type Si substrate. Substantial dark current reduction has been achieved compared with the published data for fused InGaAs/Si APDs. Dark current densities as low as 0.23 mA/cm/sup 2/ at -5 V and 3 mA/cm/sup 2/ at a gain of 10 are reported. Our improved dark current even though is still 2 orders larger than the conventional mesa-structure InGaAs/InP APD lower excess noise level is expected due to the larger difference between the electron and hole ionization coefficients of Si.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
