Meejung Kwon, Song Han, Je Hyeok Ryu, Chiyoung Lee, Yoon Young Lee, Byung Hoon Kim
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Abstract
This paper investigates the oxidation behavior of Epitaxial Silicon Germanium ($Si_{1-x}Ge_{x}$) thin-film during a dry strip process. In this study hydrogen radicals generated through $H_{2}/N_{2}$ plasma, which is known to suppress surface oxidation, was examined. Oxidation behavior and Ge loss rate are compared according to Ge content.
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