{"title":"A 75.8dB-SNDR Pipeline SAR ADC with 2nd-order Interstage Gain Error Shaping","authors":"Chen-Kai Hsu, Nan Sun","doi":"10.23919/VLSIC.2019.8778032","DOIUrl":null,"url":null,"abstract":"This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both closed-loop and open-loop amplification. A prototype ADC with the proposed 2nd-order GES technique in 40nm CMOS achieves 75.8dB SNDR over 12.5MHz BW while operating at 100MS/s and consuming 1.54mW. It achieves 174.9dB Schreier FoM. The GES-related hardware occupies less than 2% of the core area.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"14 1","pages":"C68-C69"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778032","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both closed-loop and open-loop amplification. A prototype ADC with the proposed 2nd-order GES technique in 40nm CMOS achieves 75.8dB SNDR over 12.5MHz BW while operating at 100MS/s and consuming 1.54mW. It achieves 174.9dB Schreier FoM. The GES-related hardware occupies less than 2% of the core area.