A 75.8dB-SNDR Pipeline SAR ADC with 2nd-order Interstage Gain Error Shaping

Chen-Kai Hsu, Nan Sun
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引用次数: 7

Abstract

This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both closed-loop and open-loop amplification. A prototype ADC with the proposed 2nd-order GES technique in 40nm CMOS achieves 75.8dB SNDR over 12.5MHz BW while operating at 100MS/s and consuming 1.54mW. It achieves 174.9dB Schreier FoM. The GES-related hardware occupies less than 2% of the core area.
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一种二阶级间增益误差整形的75.8dB-SNDR管道SAR ADC
本文提出了一种低成本增益误差整形(GES)技术,可以有效地抑制流水线adc的带内级间增益误差。它适用于闭环和开环放大。采用所提出的二阶GES技术的40nm CMOS原型ADC在12.5MHz BW下实现了75.8dB SNDR,工作速度为100MS/s,功耗为1.54mW。它达到了174.9dB的施雷埃FoM。与ges相关的硬件占核心面积不到2%。
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