Yao‐Feng Chang, Yen‐Ting Chen, F. Xue, Yanzhen Wang, F. Zhou, B. Fowler, J. Lee
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引用次数: 9
Abstract
The electrical characteristics of SiOx-based complementary resistive switching (CRS) memristor have been investigated. Post-deposition annealing (PDA: 500°C 5min in O2) of TaN/SiO2/n++ Si-substrate CRS memristor has been found to reduce operational variation in device characteristics, as well as improve the electrical stability during repeated switching. In this work, we have also studied the effects of sweeping polarity, operating temperature, electrode material and dimension scaling. Our experimental results not only provide additional insights into optimization of the SiOx-based CRS memory but also help in constructing a physical picture for the switching mechanism.
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