S. Lal, Jing Lu, B. Thibeault, S. Denbaars, U. Mishra
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Abstract
This paper report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (Id) of 29 mA and transconductance (gm_d) of 7.4 mS at a Vgs = 0 V is measured for a device with a width of (75x2) f.lm and an aperture length (Lap) of 8 μm.
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