Resonance tunneling transistors based on C60 encapsulated double-walled carbon nanotubes

Abstract

We report electrical transport properties of resonance tunneling transistors fabricated using C60-filled metallic double-walled carbon nanotubes. All the examined devices exhibit a strong negative differential resistance (NDR) behavior, and the high peak-to-valley current ratios more than 103 are observed at room temperature. More importantly, the observed NDR characteristics remain stable under forward and backward measurements. In addition, it is found that the applied gate voltages exercise a great influence on the peak voltage of NDR.