G. Masmitjà, Pedro A. Ortega, G. López, E. Calle, M. Garcia, I. Martín, A. Orpella, C. Voz, R. Alcubilla
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引用次数: 1
Abstract
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.
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