{"title":"Low Temperature Cu-Cu Bonding Using Ag Nanostructure for 3D Integration","authors":"Ziyu Liu, Jian Cai, Qian Wang, Lin Tan, Yang Hu","doi":"10.1149/2.0061510SSL","DOIUrl":null,"url":null,"abstract":"A novel reliable low temperature short time Cu-Cu bonding method using Ag nanostructure for 3D integration was realized in the work. Ag nanostructure consisted of many nanoparticles (NP) were deposited by pulsed laser deposition on patterned Cu pads. Bonding process was completed at 250°C for 5 min followed by an annealing process at 250°C for 25 min. Average shear strength of 14.4 MPa was reached and cracks occurred at bonded Ag interfaces, Ag/Cu interfaces and TiW/Al interfaces. According to cross-sectional interface inspection, continuous void-free bonded-Ag film was observed at the bonding interface, which was significantly beneficial to lowering electrical resistance.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"62 3 1","pages":"75"},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0061510SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A novel reliable low temperature short time Cu-Cu bonding method using Ag nanostructure for 3D integration was realized in the work. Ag nanostructure consisted of many nanoparticles (NP) were deposited by pulsed laser deposition on patterned Cu pads. Bonding process was completed at 250°C for 5 min followed by an annealing process at 250°C for 25 min. Average shear strength of 14.4 MPa was reached and cracks occurred at bonded Ag interfaces, Ag/Cu interfaces and TiW/Al interfaces. According to cross-sectional interface inspection, continuous void-free bonded-Ag film was observed at the bonding interface, which was significantly beneficial to lowering electrical resistance.
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