J.P Sydow , D Chamberlain , R.A Buhrman , K Char , B.H Moeckly
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引用次数: 5
Abstract
We report on the effects of electromigration of basal plane oxygen vacancies on SNS ramp edge Josephson junctions where the N-layer is YBa2Cu2.79Co0.21O7−δ, a doped version of the YBCO electrodes. Through the application of a 4–10 mA (∼2–5 MA/cm2) current bias at room temperature, the basal plane oxygen order and content in the N and S layers were improved. This is demonstrated by an increase in IcRn from <5 μV, to as much as 205 μV. The implications of these results on SNS junction fabrication, and the nature of tunneling in such devices are discussed.
我们报道了氮层为YBa2Cu2.79Co0.21O7−δ(掺杂版的YBCO电极)的SNS斜坡边Josephson结的基面氧空位电迁移的影响。通过在室温下施加4-10 mA (~ 2-5 mA /cm2)的电流偏置，改善了氮层和硫层的基面氧阶和含量。这可以通过IcRn从5 μV增加到205 μV来证明。讨论了这些结果对SNS结制造的影响，以及这种器件中隧道的性质。
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