Performance improvement of 3-D position-sensitive pixellated HgI2 detectors when cooled from room temperature to 10 °C

Yuefeng Zhu, W. Kaye, Zhong He, Feng Zhang
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引用次数: 2

Abstract

An experiment to measure the performance of 3-D position-sensitive pixellated HgI2 crystals cooled below room temperature was carried out using a new ASIC from GammaMedica-Ideas. This ASIC is capable of reading out the digitized pre-amplifier signal waveforms of 121 pixels and the cathode. A significant improvement in energy resolution from 1.48% FWHM at 662keV for the whole detector to 1.09% FWHM is observed on a 18×18×11mm3 crystal at −4800V cathode bias when the ambient temperature is lowered from 70°F to 50°F (about 10°C). This resolution improvement is partly due to electronic noise reduction in the readout system. However, analysis of the pre-amplifier waveforms showed that changes in crystal properties played a more important role. A correlation between total electron trapping and energy resolution was identified. However, the amount of trapping was found irrelevant to crystal performance. Instead, the non-uniformity of charge collection, namely non-uniformity of the material defects, was believed to be the main contributor to crystal performance.
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3-D位置敏感像素化HgI2探测器从室温冷却到10°C时的性能改进
利用GammaMedica-Ideas的新型ASIC进行了一项测量室温下三维位置敏感像素化HgI2晶体性能的实验。该专用集成电路能够读出121像素和阴极的数字化前置放大器信号波形。当环境温度从70°F降低到50°F(约10°C)时,在阴极偏置为- 4800V的18×18×11mm3晶体上,整个探测器的能量分辨率从662keV时的1.48%提高到1.09%。这种分辨率的提高部分是由于读出系统中的电子噪声降低。然而,对前置放大器波形的分析表明,晶体性质的变化起着更重要的作用。确定了总电子捕获与能量分辨率之间的相关性。然而,发现捕获量与晶体性能无关。相反,电荷收集的不均匀性,即材料缺陷的不均匀性,被认为是影响晶体性能的主要因素。
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