The performance of GridPix detectors

Y. Bilevych, V. Carballo, M. Fransen, H. van der Graaf, N. de Groot, F. Hartjes, N. Hessey, A. Konig, W. Koppert, M. Rogers, J. Schmitz, R. Schon, J. Timmermans, J. Visschers
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Abstract

A GridPix detector is a gaseous detector capable of detecting individual single primary electrons from ionizing particles. Such a detector consists of a pixel chip as active anode covered with a thin layer of silicon rich silicon nitride (SiRN) for protection against discharges, an integrated amplification grid (InGrid), applied on top of the chip by wafer post processing techniques, and a cathode plane. The drift region is between the grid and cathode while the gas gain occurs between the chip and the grid. The discharge quenching properties of the SiRN layer have been determined as well as the relation on grid capacitance, grid voltage and gas mixture. Part of the detectors in this report were of the type Gossip, a GridPix detector with a drift gap of ∼1 mm. Using such thin drift layer, one may consider this detector as a replacement for a silicon pixel detector. The performance of three Gossip detectors has been investigated by measurements in a test beam at CERN.
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GridPix探测器的性能
GridPix探测器是一种气体探测器,能够从电离粒子中检测单个初级电子。这种探测器包括一个像素芯片作为主动阳极,上面覆盖一层薄薄的富硅氮化硅(SiRN)以防止放电,一个集成放大栅格(InGrid),通过晶圆后处理技术应用于芯片顶部,以及一个阴极平面。漂移区在栅极和阴极之间,而气体增益发生在芯片和栅极之间。测定了sin层的放电淬火性能以及与栅极电容、栅极电压和气体混合物的关系。本报告中的部分探测器为Gossip类型,这是一种GridPix探测器,漂移间隙为1 mm。利用这种薄的漂移层,可以把这种检测器看作硅像素检测器的替代品。在欧洲核子研究中心的测试光束中测量了三个八卦探测器的性能。
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