T. Sugino, H. Yamamoto, T. Yamada, H. Ninomiya, Y. Sakamoto, K. Matsuda, J. Shirafuji
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引用次数: 0
Abstract
Effects of H/sub 2/ and PH/sub 3/ plasma treatment of the InP surface on the Schottky barrier junction characteristics are discussed. Au/n-InP Schottky junctions with barrier heights as high as 0.7 eV were achieved by surface treatment with H/sub 2/ and PH/sub 3/ plasma. It is shown that this enhancement of the barrier height is partly due to weakening of the surface Fermi level pinning and partly due to the forming of a thin oxide film or a thin P layer. Deep levels at 0.21 and 0.51 eV below the conduction band are generated at and near the surface of InP during H/sub 2/ plasma treatment. These traps are not observed in the case of PH/sub 3/ plasma treatment.<>
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