{"title":"Electrical and optical properties of Ni/sup 3+/ in p-type InP","authors":"K. Korona, G. Brémond, A. M. Hennel","doi":"10.1109/ICIPRM.1991.147363","DOIUrl":null,"url":null,"abstract":"Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni/sup 2+/ transition was found.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"35 1","pages":"323-326"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147363","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni/sup 2+/ transition was found.<>
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